PART |
Description |
Maker |
CSD363 CSD363O CSD363R CSD363Y |
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 40 - 240 hFE. 40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 70 - 140 hFE. 40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 40 - 80 hFE. 40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 120 - 240 hFE.
|
Continental Device India Limited
|
2SD667A |
1A , 120V NPN Plastic Encapsulated Transistor
|
SeCoS Halbleitertechnologie GmbH
|
2SD1953 0771 |
NPN Epitaxial Planar Silicon Transistor 120V/1.5A Driver Applications From old datasheet system NPN Epitaxial Planar Silicon Transistors for 120V/1.5A Driver Applications(120V/1.5A驱动器应用的NPN硅外延平面型晶体
|
Sanyo Electric Co.,Ltd.
|
2SC3906K 2SC4102 2SC2389S |
Transistors > Small Signal Bipolar Transistors(up to 0.6W) High-voltage Amplifier Transistor(120V 50mA) Transistors
TRANSISTOR|BJT|NPN|120VV(BR)CEO|50MAI(C)|SOT-23VAR
High-voltage Amplifier Transistor(120V/ 50mA) High-voltage Amplifier Transistor(120V, 50mA) 高电压放大器晶体管(120伏特0mA的)
|
Toshiba Semiconductor ROHM[Rohm] Rohm Co., Ltd.
|
2SC3906K 2SC4102-13 |
NPN 50mA 120V High Voltage Amplifier transistors
|
Rohm
|
FMMT494-17 |
120V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
|
Diodes Incorporated
|
2SC2784 2SC2784P |
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-221VAR 晶体管|晶体管| npn型| 120伏特五(巴西)总裁| 50mA的一(c)|21VAR NPN SILICON TRANSISTOR
|
NEC, Corp. NEC[NEC]
|
FCX605 FCX605TA |
120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR NPN Darlington Transistor
|
http:// Zetex Semiconductors
|
2SC3421Y |
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1A I(C) | TO-126 晶体管|晶体管| npn型| 120伏特五(巴西)总裁| 1A条一(c)|26
|
Kingbright, Corp.
|
CSD600KF |
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1A I(C) | TO-126 晶体管|晶体管| npn型| 120伏特五(巴西)总裁| 1A条一(c)|26
|
Sanyo Electric Co., Ltd.
|
2SC2240BL 2SC2240GR |
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100MA I(C) | TO-92 晶体管|晶体管| npn型| 120伏特五(巴西)总裁| 100mA的一(c)|2
|
Hantronix, Inc.
|